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基底温度对Ag-MgF2金属陶瓷薄膜内应力的影响
引用本文:李爱侠,孙大明,孙兆奇,宋学萍,赵宗彦. 基底温度对Ag-MgF2金属陶瓷薄膜内应力的影响[J]. 复合材料学报, 2004, 21(2): 22-26
作者姓名:李爱侠  孙大明  孙兆奇  宋学萍  赵宗彦
作者单位:安徽大学物理系, 合肥230039
基金项目:国家自然科学基金,安徽省自然科学基金,安徽省教育厅科研项目,59972001,01044901,99JL0024,,,
摘    要:用电子薄膜应力分布测试仪测量了基底温度对Ag-MgF2金属陶瓷薄膜内应力的影响。结果表明:基底温度在300℃~400℃范围内,φ20.4mm选区内的薄膜平均应力最小,应力分布比较均匀,应力为张应力。XRD分析表明:当基底温度在300℃~400℃范围内,Ag-MgF2薄膜中的Ag和MgF2组分的晶格常数接近块体值,说明通过改变基底温度可以降低薄膜内应力。 

关 键 词:Ag-MgF2金属陶瓷薄膜   应力   基底温度   微结构
文章编号:1000-3851(2004)02-0022-05
收稿时间:2002-12-20
修稿时间:2003-04-03

EFFECT OF SUBSTRATE TEMPERATURE ON RESIDUAL STRESS IN Ag-MgF2 CERMET FILMS
LI Aixia,SUN Daming,SUN Zhaoqi,SONG Xueping,ZHAO Zongyan. EFFECT OF SUBSTRATE TEMPERATURE ON RESIDUAL STRESS IN Ag-MgF2 CERMET FILMS[J]. Acta Materiae Compositae Sinica, 2004, 21(2): 22-26
Authors:LI Aixia  SUN Daming  SUN Zhaoqi  SONG Xueping  ZHAO Zongyan
Affiliation:Department of Physics, Anhui University, Hefei 230039,China
Abstract:This paper has investigated the effect of substrate temperature on the residual stress and microstructure of Ag-MgF2 cermet films prepared by vapor deposition. X-ray diffraction (XRD) technique was employed to study the microstructure of the films. The results show that the average stress over a φ20.4 mm round area is the least and the residual stress of the films appears to be tensile stress between 300℃ and 400℃. Crystal lattice constants of Ag and MgF2 both approach the bulk values. The residual stress of the films can be decreased by altering the substrate temperature.
Keywords:Ag-MgF_2 film  stress  substrate temperature  microstructure
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