Large-scale AlN nanowires synthesized by direct sublimation method |
| |
| Authors: | M Lei B Song X Guo YF Guo PG Li WH Tang |
| |
| Affiliation: | 1. Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Xiasha College Park, Hangzhou 310018, China;2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 10080, China;1. College of New Energy, Bohai University, Jinzhou 121013, People''s Republic of China;2. Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, People''s Republic of China;3. College of Physics, Beihua University, Jilin 132000, People''s Republic of China |
| |
| Abstract: | Hexagonal aluminum nitride (AlN) nanowires were fabricated by direct sublimation method without a catalyst layer. The obtained nanowires have diameters of about 30–100 nm and length up to tens of micrometers. TEM observation indicates that these nanowires are single-crystalline and grow along 0 0 0 1] direction. It is thought that vapor–solid (VS) mechanism should be responsible for the growth of AlN nanowires. In addition, room temperature Raman scattering and photoluminescence spectra from AlN nanowires were studied. Photoluminence spectrum of the AlN nanowires shows a wide emission band centered of 517 and 590 nm, which is related to N vacancies and the transition from the level of VN+ to ground state of the deep level of VAl3? + 3ON+] defects, respectively. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
