Monte Carlo calculation of hot electron drift velocity in silicon (100)-inversion layer by including three subbands

A Monte Carlo calculation of the drift velocity of hot electrons in quantized silicon inversion layers for (100)-oriented surface has been performed by considering the three lowest subbands. The intersubband and intervalley phonons conform to the surface Brillouin zone structure and are assumed to have bulk values of deformation potential constants. It is found that most of the electrons tend to occupy the E_0′ subband at about 10 kV cm^-1. The effect of surface-oxide-charge scattering is found to be quite important. The calculated curves show a change of slope at about 10 kV cm^-1 and do not show clear saturation. This is in contrast with the experimental curve which shows first a smooth variation and then tends to saturate.