Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology |
| |
| Authors: | Jagannathan B Khater M Pagette F Rieh J-S Angell D Chen H Florkey J Golan F Greenberg DR Groves R Jeng SJ Johnson J Mengistu E Schonenberg KT Schnabel CM Smith P Stricker A Ahlgren D Freeman G Stein K Subbanna S |
| |
| Affiliation: | IBM Microelectron. Semicond. Res. & Dev. Center (SRDC), Hopewell Junction, NY; |
| |
| Abstract: | This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (fT) of 207 GHz and an fMAX extrapolated from Mason's unilateral gain of 285 GHz. fMAX extrapolated from maximum available gain is 194 GHz. Transistors sized 0.12×2.5 μm2 have these characteristics at a linear current of 1.0 mA/μm (8.3 mA/μm2). Smaller transistors (0.12×0.5 μm2) have an fT of 180 GHz at 800 μA current. The devices have a pinched base sheet resistance of 2.5 kΩ/sq. and an open-base breakdown voltage BVCEO of 1.7 V. The improved performance is a result of a new self-aligned device structure that minimizes parasitic resistance and capacitance without affecting fT at small lateral dimensions |
| |
| Keywords: | |
|
