| 脉冲激光模拟单粒子锁定试验研究 |
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| 引用本文： | 杨世宇,曹洲,李丹明,薛玉雄,田恺.脉冲激光模拟单粒子锁定试验研究[J].半导体学报,2009,30(6):064009-4. |
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| 作者姓名： | 杨世宇 曹洲 李丹明 薛玉雄 田恺 |
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| 作者单位： | Lanzhou;Institute;Physics; |
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| 摘 要： | This paper introduces major characteristics of the single event latchup（SEL） in CMOS devices.We accomplish SEL tests for CPU and SRAM devices through the simulation by a pulse laser.The laser simulation results give the energy threshold for samples to undergo SEL.SEL current pulses are measured for CMOS devices in the latchup state,the sensitive areas in the devices are acquired,the major traits,causing large scale circuits to undergo SEL,are summarized,and the test equivalence between a pulse laser and ions is also analyzed.
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| 关 键 词： | 脉冲激光 模拟 闭锁 事件 CMOS器件 大规模集成电路 实验 设备购置 |
| 收稿时间： | 5/29/2008 3:24:27 PM |
Experimental study on the single event latchup simulated by a pulse laser |
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| Yang Shiyu,Cao Zhou,Li Danming,Xue Yuxiong and Tian Kai.Experimental study on the single event latchup simulated by a pulse laser[J].Chinese Journal of Semiconductors,2009,30(6):064009-4. |
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| Authors: | Yang Shiyu Cao Zhou Li Danming Xue Yuxiong and Tian Kai |
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| Affiliation: | Lanzhou Institute of Physics, Lanzhou 730000, China;Lanzhou Institute of Physics, Lanzhou 730000, China;Lanzhou Institute of Physics, Lanzhou 730000, China;Lanzhou Institute of Physics, Lanzhou 730000, China;Lanzhou Institute of Physics, Lanzhou 730000, China |
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| Abstract: | This paper introduces major characteristics of the single event latchup (SEL) in CMOS devices. We accomplish SEL tests for CPU and SRAM devices through the simulation by a pulse laser. The laser simulation results give the energy threshold for samples to undergo SEL. SEL current pulses are measured for CMOS devices in the latchup state, the sensitive areas in the devices are acquired, the major traits, causing large scale circuits to undergo SEL, are summarized, and the test equivalence between a pulse laser and ions is also analyzed. |
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| Keywords: | single event effect pulse laser single event latchup |
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