| LC—2A型离子注入设备的某些改进 |
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| 引用本文： | 范才有. LC—2A型离子注入设备的某些改进[J]. 微电子学, 1990, 20(4): 11-14 |
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| 作者姓名： | 范才有 |
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| 作者单位： | 四川固体电路研究所 |
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| 摘 要： | 本文叙述了弗里曼(Freeman)离子源体联接在LC-2A型中能离子注入机上的应用;表明了弗里曼离子源体与LC-2A型中能离子注入机光路系统相吻合后,可以茯得较大束流;这样,满足了我所半导体集成电路研制工艺中高剂量离子注入掺杂要求;文章还讨论了LC-2A型离子注入机束流增大后引起的诸如离子流的污染、磁分析器扁管防“穿通”、以及样品热聚积效应问题。
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| 关 键 词： | Freeman 离子源体 离子注入 设备 |
The Improvement in Beamcurrent of LC-2A Ion Implanter |
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| Fan Caiyou. The Improvement in Beamcurrent of LC-2A Ion Implanter[J]. Microelectronics, 1990, 20(4): 11-14 |
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| Authors: | Fan Caiyou |
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| Affiliation: | Sichuan Institute of Solid-State Circuits |
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| Abstract: | The application of Freeman ion source linked to LC-2A ion implanter is described in the paper. It has been shown that larger beam current can be obtained by making Freeman ion source compatible with the beamline of LC-2A medium current ion implanter, which satisfies the need for high dosage implantation. Questions associated with the improvement in beam current of LC-2A ion implanter, such as the contamination of ion source, the "punching" of the bend of the analyzer chamber and the effect of the thermal buildup on samples, are also disscussed. |
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| Keywords: | Ion implantation IC technology |
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