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| RTD/HEMT串联型共振隧穿三极管的设计与研制 | |
| 引用本文： | 梁惠来,郭维廉,宋瑞良,齐海涛,张世林,胡留长,李建恒,毛陆虹,商跃辉,冯震,田国平,李亚丽. RTD/HEMT串联型共振隧穿三极管的设计与研制[J]. 半导体学报, 2007, 28(10): 1594-1598 |
| 作者姓名： | 梁惠来 郭维廉 宋瑞良 齐海涛 张世林 胡留长 李建恒 毛陆虹 商跃辉 冯震 田国平 李亚丽 |
| 作者单位： | 1. 天津大学电子信息工程学院,天津,300072 2. 天津大学电子信息工程学院,天津,300072;中国电子科技集团公司第十三研究所,石家庄,050051 3. 中国电子科技集团公司第十三研究所,石家庄,050051 |
| 摘 要： | 对RTD/HEMT串联型共振隧穿三极管进行了设计和研制.测量结果表明:最大电流峰谷比为17.6∶1,棚压对峰值电压调控能力在1.5～7.7范围内,-3dB截止频率为4GHz,此种器件可与HEMT在结构和工艺上兼容,可应用于HEMT高速电路. |
| 关 键 词： | RTT RTD HEMT 跨导截止频率 电流峰谷比 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-06-12 |
Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure |
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| Liang Huilai, Guo Weilian, Song Ruiliang, Qi Haitao, Zhang Shilin, Hu Liuchang, Li Jianheng, Mao Luhong, Shang Yuehui, Feng Zhen, Tian Guoping, Li Yali. Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure[J]. Journal of Semiconductors, 2007, In Press. Liang H L, Guo W L, Song R L, Qi H T, Zhang S L, Hu L C, Li J H, Mao L H, Shang Y H, Feng Z, Tian G P, Li Y L. Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure[J]. Chin. J. Semicond., 2007, 28(10): 1594.Export: BibTex EndNote | |
| Authors: | Liang Huilai Guo Weilian Song Ruiliang Qi Haitao Zhang Shilin Hu Liuchang Li Jianheng Mao Luhong Shang Yuehui Feng Zhen Tian Guoping Li Yali |
| Affiliation: | School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China;No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China;No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China;No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China |
| Abstract: | The design and fabrication of a resonant tunneling transistor with an RTD/HEMT in-series structure are presented.The measurement results of the fabricated devices show that the maximum peak valley current ratio (PVCR) is 17.6∶1,the gate voltage modulating peak voltage ratio is in the range of 1.5～7.7,and the -3dB cut-off frequency is about 4GHz.This device is compatible with HEMTs in the device structure and fabrication technology,and can be used in high speed circuits with HEMTs devices. |
| Keywords: | RTT RTD HEMT transconductance cut off frequency PVCR |
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