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低杂散锁相环中的电荷泵设计
引用本文:薛红,李智群,王志功,李伟,章丽. 低杂散锁相环中的电荷泵设计[J]. 半导体学报, 2007, 28(12): 1988-1992
作者姓名:薛红  李智群  王志功  李伟  章丽
作者单位:东南大学射频与光电集成电路研究所,南京,210096
基金项目:东南大学射频与光电集成电路研究所与安宇科技合作项目
摘    要:用TSMC 0.18μm CMOS工艺设计并实现了一种电荷泵电路.传统的电荷泵电路中充放电电流有较大的电流失配,电流失配导致相位偏差,从而引起杂散并降低了锁相环的锁定范围.文中采用与电源无关的基准电流源电路,运用运算放大器和自偏置高摆幅共源共栅电流镜电路实现了充放电电流的高度匹配,从而降低了杂散.测试结果表明:电源电压1.8V时,电荷泵电流为0.475mA,在0.3~1.6V输出电压范围内电流失配小于10mA,功耗为6.8mW.

关 键 词:参考杂散  电流失配  电荷泵  运算放大器  自偏置电流镜
收稿时间:2015-08-18
修稿时间:2007-07-09

A Charge Pump Design for Low-Spur PLL
Xue Hong, Li Zhiqun, Wang Zhigong, Li Wei, Zhang Li. A Charge Pump Design for Low-Spur PLL[J]. Journal of Semiconductors, 2007, In Press. Xue H, Li Z Q, Wang Z G, Li W, Zhang L. A Charge Pump Design for Low-Spur PLL[J]. Chin. J. Semicond., 2007, 28(12): 1988.Export: BibTex EndNote
Authors:Xue Hong  Li Zhiqun  Wang Zhigong  Li Wei  Zhang Li
Affiliation:Institute of RF- and OE-ICs,Southeast University,Nanjing 210096,China;Institute of RF- and OE-ICs,Southeast University,Nanjing 210096,China;Institute of RF- and OE-ICs,Southeast University,Nanjing 210096,China;Institute of RF- and OE-ICs,Southeast University,Nanjing 210096,China;Institute of RF- and OE-ICs,Southeast University,Nanjing 210096,China
Abstract:A charge-pump circuit that can be used in PLL is achieved through a TSMC 0.18μm CMOS process.Conventional CMOS charge pump circuits have large current mismatch.The current mismatch can generate a phase offset,which increases spurs in PLL outputs and reduces the locking range.An operational amplifier, self-biasing cascode current mirror, and supply-independent reference current source are used to make the charge and discharge current match.Measurement results show that the charge pump current is 0.475mA and the current mismatch is less than 10mA in the output voltage range of 0.3~1.6V,with power consumption of 6.8mW at 1.8V.
Keywords:reference spur   current mismatch   charge pump   operational amplifier   self-biasing current mirror
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