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Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers |
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| Authors: | Kukushkin S. A. Mizerov A. M. Grashchenko A. S. Osipov A. V. Nikitina E. V. Timoshnev S. N. Bouravlev A. D. Sobolev M. S. |
| Affiliation: | 1.Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, 199178, St. Petersburg, Russia ;2.ITMO University, 197101, St. Petersburg, Russia ;3.Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia ;4.St. Petersburg Academic University, 194021, St. Petersburg, Russia ; |
| Abstract: | Semiconductors - The photoelectric properties of GaN/SiC/Si(111) and GaN/Si(111) heterostructures grown by plasma-assisted molecular-beam epitaxy under the same growth conditions on identical... |
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