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Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission |
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| Authors: | Shastin V. N. Zhukavin R. Kh. Kovalevsky K. A. Tsyplenkov V. V. Rumyantsev V. V. Shengurov D. V. Pavlov S. G. Shuman V. B. Portsel L. M. Lodygin A. N. Astrov Yu. A. Abrosimov N. V. Klopf J. M. Hübers H.-W. |
| Affiliation: | 1.Institute for Physics of Microstructures, Russian Academy of Sciences, 607680, Nizhny Novgorod, Russia ;2.Institute of Optical Sensor Systems, German Aerospace Center (DLR), 12489, Berlin, Germany ;3.Ioffe Institute, 194021, St. Petersburg, Russia ;4.Leibniz-Institut für Kristallzüchtung (IKZ), 12489, Berlin, Germany ;5.Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany ;6.Department of Physics, Humboldt-Universität zu Berlin, 12489, Berlin, Germany ; |
| Abstract: | Semiconductors - The results of experiments aimed at the observation of split 1s states in Mg-doped Si are reported. From the results, it is possible to determine the chemical shift and exchange... |
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