| 深亚微米体硅器件电离辐射及退火与温度的相关性研究 |
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| 引用本文： | 尹雪梅,师谦,李斌.深亚微米体硅器件电离辐射及退火与温度的相关性研究[J].电子质量,2011(3):18-20. |
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| 作者姓名： | 尹雪梅 师谦 李斌 |
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| 作者单位： | 尹雪梅,Yin Xue-mei(吉林大学珠海学院电子信息系,广东,珠海,519041);师谦,Shi Qian(电子元器件可靠性物理及其应用技术国家级重点实验室,广东,广州,510610);李斌,Li Bin(华南理工大学微电子研究所,广东,广州,510640) |
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| 摘 要： | 对经过Co60不同剂量剂量率辐照的体硅MOS器件(NMOSFET与PMOSFET)分别进行了室温和高温下的退火实验,并对退火结果进行分析,讨论了退火温度对MOS器件阈值电压及辐射感生的氧化层陷阱电荷与界面态电荷产生的影响.
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| 关 键 词： | 温度 退火效应 总剂量效应 电离辐射 |
Study on the Dependence of Annealing and Temperature for the Ionizing Radiation Effects on the Deep Sub-micron Bulk Silicon Device |
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| Yin Xue-mei,Shi Qian,Li Bin.Study on the Dependence of Annealing and Temperature for the Ionizing Radiation Effects on the Deep Sub-micron Bulk Silicon Device[J].Electronics Quality,2011(3):18-20. |
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| Authors: | Yin Xue-mei Shi Qian Li Bin |
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| Affiliation: | Yin Xue-mei1,Shi Qian2,Li Bin3(1.The Department of Electronic Information,Zhuhai College Jilin University,Guangdong Zhuhai 519041,2.The Research & Analysis Center of China CEPREI Laboratory,Guangdong Guangzhou 510610,3.Institute of Microelectronics,South China University of Technology,Guangdong Guangzhou 510640) |
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| Abstract: | The MOS devices which have been irradiated under the different dose and dose rate radiation will be annealed under the room temperature and the high temperature,the annealing results will be analyzed,and the anneal temperature effect will be discussed later. |
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| Keywords: | temperature annealing effect total dose effect ionizing radiation |
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