Optical anisotropy of cyclopentene terminated GaAs(001) surfaces |
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| Authors: | R Passmann M Kropp T Bruhn BO Fimland FL Bloom AC Gossard W Richter N Esser P Vogt |
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| Affiliation: | 1.Institut für Festk?rperphysik,TU Berlin,Berlin,Germany;2.Department Berlin,ISAS – Institute for Analytical Sciences,Berlin,Germany;3.Department of Electronics and Telecommunication,Norwegian University of Science and Technology,Trondheim,Norway;4.Materials Department,University of California,Santa Barbara,USA;5.Universita degli Studi Roma “Tor Vergata”,Roma,Italy |
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| Abstract: | Up to now most of the experimental work regarding the adsorption of organic molecules has been concerned with silicon. Here
we study the interface formation on a III–V-semiconductor, GaAs(001). We show that reflectance anisotropy spectroscopy (RAS)
is a sensitive technique for investigating the interface formation between organic molecules and semiconductor surfaces. With
RAS it is possible to determine the surface reconstruction and the structural changes at the interface during the deposition
of organic molecules. These changes and the underlying adsorption process are discussed here for the adsorption of cyclopentene
on GaAs(001)c(4×4), (2×4) and (4×2).
PACS 61.66.Hq; 72.80.Le; 34.50.Dy; 68.47.Fg |
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