| GaN负电子亲和势光电阴极材料的生长研究 |
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| 引用本文： | 李朝木,曾正清,陈群霞.GaN负电子亲和势光电阴极材料的生长研究[J].真空与低温,2008,14(4). |
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| 作者姓名： | 李朝木 曾正清 陈群霞 |
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| 作者单位： | 中国电子科技集团公司,第五十五研究所,江苏,南京,210016 |
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| 基金项目： | 自主资助项目(556000838) |
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| 摘 要： | 采用低压金属有机化学汽化淀积法在蓝宝石(0001)衬底上生长2~5μm厚度的P-AlxGa1-xN/GaN层(0
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| 关 键 词： | 负电子亲和势 GaN光电阴极激活 紫外敏感材料 光电探测 |
INVESTIGATION GROWTH OF GaN NEGATIVE ELECTRON AFFINITY PHOTO-CATHODES MATERIAL |
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| LI Chao-mu,ZENG Zheng-qing,CHEN Qun-xia.INVESTIGATION GROWTH OF GaN NEGATIVE ELECTRON AFFINITY PHOTO-CATHODES MATERIAL[J].Vacuum and Cryogenics,2008,14(4). |
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| Authors: | LI Chao-mu ZENG Zheng-qing CHEN Qun-xia |
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| Affiliation: | The 55th Research Institute Of China Electronic Technology Group Corporation;Nanjing 210016;China |
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| Abstract: | Two to five micrometer thick P-AlxGa1-xN/GaN layers with 0
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| Keywords: | negative electorn affinity activation of GaN photo-cathodes ultraviolet sensitive material photo-detection |
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