Improved lifetime of poly-Si TFTs with a self-alignedgate-overlapped LDD structure |
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Authors: | Mishima Y. Ebiko Y. |
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Affiliation: | Fujitsu Labs. Ltd., Atsugi; |
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Abstract: | We investigated the lifetimes for various poly-Si thin film transistor (TFT) structures. A gate-overlapped lightly doped drain (GOLDD) structure was self-aligned by the side etching of Al-Nd in an Al-Nd/Mo gate electrode. The dopant activation process in the LDD regions of GOLDD TFTs was performed by using a H2 ion-doping technique. We also observed the effect of lifetime on the source/drain activation process. The thermal annealing of the source/drain region was found to extend the lifetime. The predicted lifetime of our GOLDD poly-Si TFT is superior to those of non-lightly doped drain (non-LDD) and lightly-doped drain (LDD) poly-Si TFTs. The trapped-electron density at the drain junction after bias-stressing was also investigated using a two-dimensional (2-D) simulation |
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