| PVA栅绝缘层浓度对P3HT有机场效应晶体管性能的影响 |
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| 引用本文： | 白潇,程晓曼,樊剑锋,蒋晶,郑灵程,吴峰.PVA栅绝缘层浓度对P3HT有机场效应晶体管性能的影响[J].发光学报,2014,35(4):470-475. |
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| 作者姓名： | 白潇 程晓曼 樊剑锋 蒋晶 郑灵程 吴峰 |
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| 作者单位： | 1. 天津理工大学 理学院, 天津 300384;
2. 天津理工大学 教育部显示材料与光电器件重点实验室, 天津光电材料与器件重点实验室, 天津 300384 |
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| 基金项目： | 国家自然科学基金(61076065,11204214)资助项目 |
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| 摘 要： | 采用溶液制备法制备了用PVA作为绝缘层、P3HT作为有源层的有机场效应晶体管，,研究了不同浓度PVA栅绝缘层对器件性能的影响。实验结果显示,以质量分数为8%的PVA溶液制备的栅绝缘层具有最好的性能，器件的场效应迁移率为0.31 cm2·V-1·s-1，阈值电压为-6 V。进一步分析了PVA栅绝缘层浓度对器件性能提高的原因，结果表明，对于制备溶液化的有机场效应晶体管，选取合适的PVA栅绝缘层浓度非常重要。
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| 关 键 词： | 有机场效应晶体管 栅绝缘层 浓度 PVA P3HT |
| 收稿时间： | 2013/12/23 |
Effect of Poly(vinyl alcohol) Gate Dielectric Concentration on Poly(3-hexylthiophene) Based Organic Field Effect Transistor |
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| BAIXiao,CHENG Xiao-man,FAN Jian-feng,JIANG Jing,ZHENG Ling-cheng,WU Feng.Effect of Poly(vinyl alcohol) Gate Dielectric Concentration on Poly(3-hexylthiophene) Based Organic Field Effect Transistor[J].Chinese Journal of Luminescence,2014,35(4):470-475. |
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| Authors: | BAIXiao CHENG Xiao-man FAN Jian-feng JIANG Jing ZHENG Ling-cheng WU Feng |
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| Affiliation: | 1. School of Science, Tianjin University of Technology, Tianjin 300384, China;
2. Institute of Material Physics, Tianjin University of Technology, Key Laboratory of Display Material and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory of Photoelectric Materials and Device, Tianjin 300384, China |
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| Abstract: | Poly(3-hexylthiophene) based organic field effect transistors with poly(vinyl alcohol) gate dielectrics were fabricated by solution process. The effects of PVA gate dielectrics concentration on the performance of the devices were investigated. The experimental results show that the device with PVA mass fraction of 8% displays the best performance, which the field-effect mobility is up to 0.31 cm2·V-1·s-1 and the threshold voltage is as low as -6 V. Furthermore, the reason for the performance improvement of the devices was analyzed. It indicates that the appropriate PVA concentration is extremely important for the solution-processed OFETs. |
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| Keywords: | organic field effect transistors gate dielectrics concentration PVA P3HT |
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