首页 | 官方网站   微博 | 高级检索  
     


Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AIGaN/GaN heterostuctures
Authors:Duan Huantao  Hao Yue  Zhang Jincheng
Affiliation:Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract:metal-organic vaporphase epitaxy aluminum nitride gallium nitride AlGaN/GaN heterostructures
Keywords:metal-organic vaporphase epitaxy  aluminum nitride  gallium nitride  AlGaN/GaN heterostructures
本文献已被 维普 万方数据 等数据库收录!
点击此处可从《半导体学报》浏览原始摘要信息
点击此处可从《半导体学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号