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Active electric near field imaging of electronic devices |
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| Authors: | A Coppa V Foglietti E Giovine A Doria GP Gallerano E Giovenale A Cetronio C Lanzieri M Peroni F Evangelisti |
| Affiliation: | aIstituto di Fotonica e Nanotecnologie, Via Cineto Romano 42, 00156 Roma, Italy bENEA – Dipartimento Tecnologie Fisiche e Nuovi Materiali, 00044 Frascati, Italy cSelex Sistemi Integrati S.p.A., Via Tiburtina, Km 12,400; 00131 Roma, Italy |
| Abstract: | An active two dimensional near field imaging of a High Electron Mobility Transistor (HEMT) used as THz detector has been performed. The reflective imaging system developed at the ENEA FEL Facility in Frascati has been used to this purpose. This imaging technique has shown to be particularly powerful in resolving various coupling mechanisms of the incident radiation with the device. |
| Keywords: | High electron mobility transistor Terahertz detector Near field imaging |
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