| 大尺寸锑化铟晶体生长等径技术研究 |
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| 引用本文： | 王志芳,王燕华,陈元瑞,程波.大尺寸锑化铟晶体生长等径技术研究[J].红外,2011,32(1):27-30. |
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| 作者姓名： | 王志芳 王燕华 陈元瑞 程波 |
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| 作者单位： | 华北光电技术研究所,北京,100015 |
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| 摘 要： | 为了获得高质量的晶体,需要解决大尺寸锑化铟晶体生长过程中的精确等径控制问题.阐述了采用提拉法生长晶体时的直径控制原理及方法,分析了影响等径控制的温度与时滞因素,并采用计算机辅助控制方法解决了大尺寸锑化铟晶体生长过程中的精确等径控制问题.生长出的3in锑化铟晶体的生长条纹不明显,位错密度小于10个/cm2.
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| 关 键 词： | 等径控制 锑化铟 晶体生长 位错 |
| 收稿时间： | 9/2/2010 8:43:54 PM |
| 修稿时间： | 9/7/2010 10:34:39 PM |
Diameter Controlling of Large Diameter InSb Crystal |
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| Wang Zhifang,Wang yan-hu,Chen Yuanrui and Cheng Bo.Diameter Controlling of Large Diameter InSb Crystal[J].Infrared,2011,32(1):27-30. |
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| Authors: | Wang Zhifang Wang yan-hu Chen Yuanrui and Cheng Bo |
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| Affiliation: | North China Research Institute of Electro-optics,North China Research Institute of Electro-optics,North China Research Institute of Electro-optics,North China Research Institute of Electro-optics |
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| Abstract: | To obtain high quality InSb crystals, a precision diameter-constant control technology is
required in the growth process of large size InSb crystals. The principle and method for controlling the diameter
of a crystal during its growth by using the Czochralski Method are presented. The factors, such as temperature
and time delay, which have influence on diameter-constant control are analyzed. The precision diameter-constant
control is implemented by using a computer aided method in the growth process of large size InSb crystals. The
resulting InSb crystal with a diameter of 3in shows its smooth surface from the shoulder. Its dislocation density
is less than 10/cm^2. |
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| Keywords: | diameter controlling InSb crystal growth dislocation |
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