| 一种二氧化钒膜的新的生长模式 |
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| 引用本文： | 魏雄邦,蒋亚东,吴志明,廖家轩,贾宇明,田忠.一种二氧化钒膜的新的生长模式[J].稀有金属材料与工程,2010,39(Z1). |
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| 作者姓名： | 魏雄邦 蒋亚东 吴志明 廖家轩 贾宇明 田忠 |
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| 作者单位： | 电子科技大学,四川,成都,610054 |
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| 摘 要： | 采用直流反应磁控溅射法,在Si(100)基片表面沉积厚度为1000nm的二氧化钒膜。利用X射线衍射(XRD)仪和扫描电镜(SEM)分析膜的晶相和形貌,观察到二氧化钒膜的一种新的生长模式。X射线衍射分析表明生成的膜为典型的多晶二氧化钒膜,其(200)晶面衍射峰较强。扫描电镜(SEM)分析表明,随着膜厚的增加,膜表面晶粒增大,膜表面的晶粒呈现出独特的纺锤状或棒状;膜具有明显的柱状生长特征,在膜厚380nm以上时,柱状晶生长速率快速提高。样品的阻温特性分析表明,生成的二氧化钒膜具有典型的金属-半导体相变特征。
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| 关 键 词： | 二氧化钒膜 膜厚 直流磁控溅射 |
New Growth Mode of Vanadium Dioxide Films |
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| Wei Xiongbang,Jiang Yadong,Wu Zhiming,Liao Jiaxuan,Jia Yuming,Tian Zhong.New Growth Mode of Vanadium Dioxide Films[J].Rare Metal Materials and Engineering,2010,39(Z1). |
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| Authors: | Wei Xiongbang Jiang Yadong Wu Zhiming Liao Jiaxuan Jia Yuming Tian Zhong |
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| Affiliation: | Wei Xiongbang,Jiang Yadong,Wu Zhiming,Liao Jiaxuan,Jia Yuming,Tian Zhong (University of Electronic Science , Technology of China,Chengdu 600154,China) |
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| Abstract: | Vanadium dioxide (VO2) films with thickness of 1000 nm were deposited on Si (100) slice substrate by DC reactive magnetron sputtering method.The crystalline and morphology were analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM).A new growth mode of VO2 was observed.XRD results show that the film deposited is multicrystal VO2,which has the preferred orientation (200).SEM images reveal that the grains on the film surface increase with increasing of film thickness,and the grains exist i... |
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| Keywords: | vanadium dioxide films film thickness DC magnetron sputtering |
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