|
|||||
|
|
Improvement and characteristics of conical silicon emitters employing wet-dry etching |
|
| Authors: | Shang-Chao Hung Nai-Jen Cheng Shun-Tsung Huang Yi-Cheng Hsu |
| Affiliation: | 1. Department of Information Technology and Communication, Shih Chien University Kaohsiung Campus, Kaohsiung, Taiwan 2. Institute of Photonics and Communications, National Kaohsiung University of Applied Sciences, Kaohsiung, Taiwan 3. Industrial Technology R & D Master Program on Integrated Circuit Manufacturing and Package and Test, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 4. Department of Biomechatronics Engineering, National Pingtung University of Science and Technology, Pingtung, Taiwan |
| Abstract: | A number of new technologies require conical and sharp tips to serve as electron emitters in the vacuum microelectronics. In this paper, we improved radius of curvature, height and cone angle of emitters in order to reach the enhancement result of field enhancement factor (β). We developed a fabrication process to improve geometry of emitter by employing isotropic dry etching in pure SF6 and a mixture of SF6 and O2 followed by thermal oxidation technique. We successfully achieved excellent conical emitters with 5–10 nm radius of curvature, 4.4 μm height, and 30° cone angle. The conical silicon emitters current–voltage characteristics shows that Eto = 4.8 V/μm (turn-on electric field) with current density of 10 μA/cm2, and maximum current density J = 60.4 μA/cm2 at E = 8.14 V/μm. This study may provide a practical guideline for design and fabrication of a high-performance silicon emitter used in various industrial applications. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |
