EBCMOS钝化层表面残气吸附特性

基于密度泛函理论，研究了电子轰击互补金属氧化物半导体(EBCMOS)钝化层表面的残气吸附机制，并分析其电学特性。结果表明，以Al₂O₃钝化层为例，真空腔内残余气体H₂在Al₂O₃不同表面的吸附为物理吸附，在(001)面的吸附距离最大，吸附强度最低，电荷转移最少。对比CO,N₂,CO₂,H₂O等残余气体分子在(001)表面的吸附结果发现，(001)面对残气分子的吸附均为物理吸附，(001)面相比于其他表面，对残余气体分子有更好的抑制作用，所生成钝化层能提高EBCMOS器件电子倍增层的电荷收集效率。研究结果对研制寿命长而稳定的EBCMOS器件具有理论指导意义。

Residual Gas Absorption Characteristics on The Surface of EBCMOS Passivation Layer

Based on the density functional theory, the mechanism of residual gas adsorption on the surface of EBCMOS passivation layer was investigated and its electrical characteristics were analyzed. The results show that the adsorption of residual gas H₂ in the cavity on different surfaces of the passivation layer (taking Al₂O₃ as an example), are physisorbed, with the largest adsorption distance, the lowest adsorption strength and the least charge transfer on the (001) surface. The compared results of the adsorption of other residual gas molecules such as CO, N₂, CO₂, H₂O on the (001) surface show that all of them are physically adsorbed, and the (001) surface has a better inhibition of residual gas molecules compared to other surfaces. The generation of passivation layer is more capable of improving the electron collection efficiency of the multiplication layer of EBCMOS device. Theoretical guidance is proposed for the development of long-life and stable EBCMOS device.