Rare earth titano-silicates for high k gate dielectric applications |
| |
| Affiliation: | 1. South Ural State University, Lenin pr. 76, Chelyabinsk 454080, Russia;2. Moscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny 141700, Russia;3. University of Stuttgart, Pfaffenwaldring 55, Stuttgart 70569, Germany;1. Department of Physics, Scott Christian College, (Autonomous), Nagercoil 629 003, Tamil Nadu, India;2. Department of Physics, St. Johns College Anchal, Kollam 690110, Kerala, India;1. Departamento de Química Inorgánica y Química Técnica, Paseo Senda del Rey 9, Facultad de Ciencias, Universidad Nacional de Educación a Distancia, UNED, E-28040 Madrid, Spain;2. Departamento de Química Inorgánica, Facultad de Ciencias, Universidad de Granada, UGR, 18071 Granada, Spain;1. Green Manufacturing 3Rs R&D Group, Korea Institute of Industrial Technology, Ulsan 681-310, Republic of Korea;2. School of Materials Science Engineering, KIST-UNIST-Ulsan Center for Convergent Materials, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea;3. School of Civil, Environmental, and Architectural Engineering, Korea University, 5 Anam-dong, Seoul 136-701, Republic of Korea |
| |
| Abstract: | The present paper explores the properties of rare earth titano-silicates compounds for high k applications. RE2Ti2SiO9 (RE=La, Pr and Nd) ceramic compounds were prepared using conventional solid state reaction route. Its structural, dielectric, optical and thermal properties were investigated. It was found that these materials possess a high dielectric constant in the range of 20–34 at room temperature, which is greater than that of HfO2. The UV Visible absorption spectra indicates reasonably large band gap of above 5 eV. Further these compounds also have low coefficient of thermal expansion of less than 9 ppm/°C. |
| |
| Keywords: | Large band gap Trimounsite Coefficient of thermal expansion |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
