Influence of post-annealing atmosphere on microstructure,optical and electrical properties of zinc cadmium oxide films deposited by DC and RF magnetron co-sputtering |
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| Affiliation: | 1. Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, Jilin, China;2. State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023, China;1. College of Science, Shaanxi University of Science and Technology, Xi''an 710021, China;2. College of Electrical and Information Engineering, Shaanxi University of Science and Technology, Xi''an 710021, China;3. School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi''an 710021, China;1. Laboratoire des Matériaux Ferroélectriques (LMF), Unité de Physique Mathématiques, 05UR15-04, Université de Sfax, Faculté des Sciences de Sfax (FSS), Route de Soukra km 3.5, B.P. 1171, 3000 Sfax, Tunisia;2. Laboratoire de Physique de la Matière Condensée (LPMC), Université de Picardie, Jules Verne, Pôle Scientifique, 33 rue Saint-Leu, 80039 Amiens Cedex 1, France;3. Laboratoire de Chimie Inorganique, Université de Sfax, Faculté des Sciences de Sfax, BP 1171, Tunisia;1. Laboratory of Ceramic Materials, Federal University of Rio Grande do Sul, Brazil;2. Institute of Physics, Federal University of Rio Grande do Sul, Brazil |
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| Abstract: | Zinc cadmium oxide (Zn1−xCdxO) films were deposited on quartz substrates by direct current (DC) and radio frequency (RF) reactive magnetron co-sputtering and the influence of post-annealing atmosphere on their microstructure, optical and electrical properties were investigated by X-ray diffraction (XRD), optical absorbance, photoluminescence (PL) and Hall measurements. Results indicate that the band gap (Eg) of all Zn1−xCdxO films annealed in different atmospheres are smaller than that of the undoped ZnO, the observed shifts in Eg being 0.43, 0.37 and 0.32 eV for the Zn1−xCdxO films annealed in argon, oxygen and vacuum, respectively. Hall measurement results indicate that all Zn1−xCdxO films annealed in different atmospheres show the n-type conduction, but the Zn1−xCdxO film annealed in vacuum has low resistivity and high concentration, which has room-temperature resistivity of 1.59 Ω cm and carrier concentration of 2.07×1017 cm−3. Compared with Zn1−xCdxO films annealed in oxygen and argon, Zn1−xCdxO film annealed in vacuum has the best crystal quality, luminescence and electrical properties. The influencing mechanism of the post-annealing atmosphere on the electrical and optical properties of the Zn1−xCdxO film is discussed. |
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| Keywords: | Zinc cadmium oxide films Microstructure Optical and electrical properties Co-sputtering Post-annealing atmosphere |
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