Co掺杂ZnO薄膜的局域结构和电荷转移特性研究

采用磁束缚电感耦合等离子体溅射沉积法在不同的氧气分压下制备了Zn_0.95Co_0.05O和Zn_0.94Co_0.05Al_0.01O薄膜.利用X射线吸收精细结构技术对薄膜O-K，Co-K和Co-L边进行了局域结构研究，结果表明：Co²⁺取代了四配位晶体场中的Zn²⁺而未改变ZnO的六方纤锌矿结构，高真空条件下制备的薄膜 关键词： Co掺杂ZnO 稀磁半导体 X射线吸收精细结构 共振非弹性X射线散射

The local structure and charge transfer properties of Co-doped ZnO thin films

Zn_0.95Co_0.05O and Zn_0.94Co_0.05Al_0.01O films were prepared by inductively coupled plasma enhanced physical vapor deposition with magnetic confinement system under different oxygen partial pressure. The local structure and charge transfer properties were investigated by X-ray absorption fine structure and resonant inelastic scattering spectroscopy at O-K, Co-K and Co-L edges. The Co K-edge and L-edge X-ray absorption fine structure revealed that Co²⁺ ions substituted for tetrahedrally coordinated Zn²⁺ ions without changing the wurtzite structure. The main defects were oxygen vacancies when the films were deposited under very low oxygen partial pressure. The resonant inelastic scattering spectroscopy indicated that the charge transfer between Co-3d and the electrons in Zn_0.94Co_0.05Al_0.01O films was much stronger than that in Zn_0.95Co_0.05O. The oxygen partial pressure had an important effect in the charge transfer of Co-doped ZnO films.