| 分子束外延HgCdTe材料的光致发光研究 |
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| 引用本文： | 姬荣斌,常勇,王善力,杨建荣,何力.分子束外延HgCdTe材料的光致发光研究[J].光学学报,1999,19(9):284-1288. |
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| 作者姓名： | 姬荣斌 常勇 王善力 杨建荣 何力 |
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| 作者单位： | 1. 昆明物理研究所,昆明,651005
2. 中国科学院上海技术物理研究所红外物理国家重点实验室,上海,200083 |
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| 摘 要： | 报道了分子束外延生长 Ｈｇ０．６８ Ｃｄ０．３２ Ｔｅ 材料的光致发光测量结果。研究了原生样品和退火处理样品、以及氮离子注入样品的低温光致发光特征。对光致发光的测试结果进行拟合得到的禁带宽度， 与用红外透射谱得到的薄膜禁带宽相近； 其半峰宽和带尾能量较小， 显示了较高的薄膜质量。样品经过退火后带尾能量降低， 双晶衍射的半峰宽也有明显的变窄
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| 关 键 词： | HgCdTe薄膜 光致发光 分子束外延 |
| 收稿时间： | 1998/1/21 |
Photoluminescence Study of MBE Hg0.68Cd0.32Te Epilayers |
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| Ji Ronbin,Chan Yong,Wang Shanli,Yang Jiangrong,He Li.Photoluminescence Study of MBE Hg0.68Cd0.32Te Epilayers[J].Acta Optica Sinica,1999,19(9):284-1288. |
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| Authors: | Ji Ronbin Chan Yong Wang Shanli Yang Jiangrong He Li |
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| Abstract: | By using photoluminescences (PL), the molecular beam epitaxy (MBE) grown Hg1-xCdxTe (x=0.32) epilayers are studied. The PL measurement shows a strong near band edge emission peak with an FWHM of 5 meV and a small broadening energy, E0(4.2 K)=1.3 meV, which indicates the high quanlity was obtained. Comparing the results of as-grow and annealing sample shows that annealing sample has a better crystal quality than the as-grow sample. |
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| Keywords: | Hg 0 68 Cd 0 32 Te epilayer photoluminescences molecular beam epitaxy |
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