含氢硅油制备SiC晶须的研究

以高含氢硅油为原料,在石墨基体上生长出SiC晶须。主要研究石墨基体的表面状态和加热温度对SiC晶须生长的影响,探究SiC晶须形成过程。影响SiC晶须形核和生长的主要因素为热处理温度,随着热处理温度的升高,SiC晶须的结晶产量也相应增高。石墨基体的表面状态对SiC晶须的形成也有一定的影响,随着石墨基体缺陷提供形核点的增多,SiC晶须的结晶产量提高,并且出现相互搭接的现象。SiC晶须的形成过程分为形核和生长两个部分,低温形核,高温生长,遵循VLS(气-液-固)生长机理。

Research on SiC Whisker Prepared by H-PSO

SiC whiskers were prepared on the matrix of graphite by using high hydrogenous silicone oil (PSO)as raw material.The effect of surface conditions of graphite and heating temperature on the growth of SiC whisker was mainly studied in this paper.The main factor which affects the nucleation and growth of SiC whisker is the heating temperature,with the heating temperature rising,the pro-duction of SiC whisker increases.The surface condition of graphite matrix also influences the growth of SiC whisker.With the nucleation points provided by graphite matrix defects increasing,the produc-tion of SiC whisker incleases and SiC whisker starts to overlap with each other.The formation process of SiC whisker includes two steps:nucleation and growth.SiC whisker nucleates at low temperature and grows at high temperature,which follows the VLS (vapor-liquid-solid)growth mechanism.