高电流密度脉冲电解制备纯铜的研究

在小型电解槽中研究高电流密度脉冲电解制备纯铜的工艺条件 ,并用XRD、SEM及等离子体质谱仪研究杂质对阴极铜沉积的结构和组成的影响。研究表明 :3 0℃时 ,脉冲电解制备纯铜的工艺条件为 :平均电流密度80 0A/m2 ,峰电流密度 40 0 0A/m2 ,脉冲宽度 2 0ms ,脉冲频率 10 0Hz,占空比 1∶4。不用添加剂时 ,电解液中有害杂质的允许含量为 (g/L) :As5+ ≤ 0 0 3、Sb3+ ≤ 0 0 0 5、Bi3+ ≤ 0 0 0 5 ;用添加剂 (mg/L) :Cl- 3 0、(NH2 ) 2 CS 0 75～ 1 0、glue 1 0～ 1 5 ,电解液中有害杂质的允许含量为 (g/L) :As5+ ≤ 0 5、Sb3+ ≤ 0 0 3、Bi3+ ≤ 0 0 5。测试结果表明 :当电解液中不含杂质时 ,铜沉积 (2 2 0 )晶面为择优取向 ,结晶形态为层状 ,电解液中含杂质时 ,铜沉积的 (2 2 0 )晶面择优取向更强 ,结晶形态为层状混块状。

Study on Making Pure Copper by Pulse Electrolysis With High Current Density

The technical conditions of making pure copper by pulse electrolysis with high current density in a small cell is studied and the effect of the impurity on the structure and composition of the copper deposition by XRD, SEM and ICP MS is demonstrated The results show that the better pulse electrolysis conditions at 30℃ are: the average current density 800A/m 2, the peak current density 4 000 A/m 2, pulse width 2 0 ms, pulse frequency 100 Hz, t on : t off =1:4 Without additives, the allowable quantity of the impurity in electrolyte are (g/L) :As 5+ ≤0 03, Sb 3+ ≤0 005, Bi 3+ ≤0 005; With additives ( Cl 0 003g/L, (NH 2) 2 CS 0 00075～0 0010g/L, glue 0 0010～0 0015g/L) the allowable quantity of the impurity are(g/L):As 5+ ≤0 5, Sb 3+ ≤0 03, Bi 3+ ≤0 05 The test result show: the cathode copper deposition preferred orientation is (220) and crystal formation is layer stat without impurity added; the copper deposition preferred orientation (220) is more and the crystal formation is layer and block stat with impurity added