Dielectric and microwave properties of ZrO2 doped CaO-SiO2-B2O3 ceramic matrix composites |
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Authors: | Ming He Shuren ZhangXiaohua Zhou Bo LiJing Wan |
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Affiliation: | a State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China b Electrical and Electronic Engineering Department, Chengdu Electromechanical College,Chengdu,China |
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Abstract: | The behavior of dielectric and microwave properties against sintering temperature has been carried out on CaO-SiO2-B2O3 ceramic matrix composites with ZrO2 addition. The results indicated that ZrO2 addition was advantageous to improve the dielectric and microwave properties. X-ray diffraction (XRD) patterns show that the major crystalline β-CaSiO3 and a little SiO2 phase existed at the temperature ranging from 950 °C to 1050 °C. At 0.5 wt% ZrO2, CaO-SiO2-B2O3 ceramic matrix composites sintered at 1000 °C possess good dielectric properties: ?r = 5.85, tan δ = 1.59 × 10−4 (1 MHz) and excellent microwave properties: ?r = 5.52, Q · f = 28,487 GHz (11.11 GHz). The permittivity of Zr-doped CaO-SiO2-B2O3 ceramic matrix composites exhibited very little temperature dependence, which was less than ±2% over the temperature range of −50 to 150 °C. Moreover, the ZrO2-doped CaO-SiO2-B2O3 ceramic matrix composites have low permittivity below 5.5 over a wide frequency range from 20 Hz to 1 MHz. |
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Keywords: | Ceramic matrix composites Dielectric Sintering X-ray analysis Microwave ZrO2 addition |
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