N2分子二聚物在352.3 nm处增益特性研究

利用微波放电激励高纯氮,并采用放大自发辐射法,研究了不同微波激励功率和不同N₂气压条件下N₂分子二聚物352.3nm辐射的增益特性。给出了沿放电管轴线N₂分子二聚物352.3nm辐射的小信号增益系数随微波激励功率和充入放电管N₂气压变化的规律。研究结果表明当微波功率大于100W时,充入N₂气压在330~1 800Pa范围内,N₂分子二聚物在352.3nm处存在受激辐射特性。当微波功率为500W,充入放电管的N₂气压为1 100Pa时,N₂分子二聚物352.3nm辐射的小信号增益系数最大为1.08%cm^-1。另外,还给出了N₂分子二聚物352.3nm辐射增益沿放电管径向分布情况。 N₂分子二聚物352.3nm辐射的增益系数在放电管中心最小,接近管壁时最大。

Gain characteristics of N2 molecular dimer at 352.3 nm

Utilizing microwave discharge to excite the high pure nitrogen, and adopting the method of amplified spontaneous emission, the gain characteristics of N_2 molecular dimer at 352.3 nm is studied under different microwave exciting power and N_2 pressure. The law that little signal gain coefficients of N_2 molecular dimer at 352.3 nm change with microwave exciting power and N_2 pressure inside discharge tube, is given along the axis of discharge tube. The results indicate that the stimulated emission characteristics of N_2 molecular dimer at 352.3 nm exist, when the microwave power is greater than 100 W, and N_2 pressure in the range from 330 to 1 800 Pa. When microwave power is 500 W N_2 pressure is 1 100 Pa, the maximum little signal gain coefficient of N_2 molecular dimer at 352.3 nm is 1.08% cm~(-1) along the axis of discharge tube. In addition, the gain distribution of N_2 molecular dimer at 352.3 nm along the radial direction of discharge tube is also given. The gain coefficient of N_2 molecular dimer at 352.3 nm is minimum at the centre of discharge tube, and maximum at the positiun close to the wall.