高In组分InGaNAs/GaAs量子阱的生长及发光特性

采用分子束外延技术(MBE)在Ga As衬底上外延生长高In组分(40%)In Ga NAs/Ga As量子阱材料,工作波长覆盖1.3~1.55μm光纤通信波段。利用室温光致发光(PL)光谱研究了N原子并入的生长机制和In Ga NAs/Ga As量子阱的生长特性。结果表明:N组分增加会引入大量非辐射复合中心;随着生长温度从480℃升高到580℃,N摩尔分数从2%迅速下降到0.2%;N并入组分几乎不受In组分和As压的影响,黏附系数接近1;生长温度在410℃、Ⅴ/Ⅲ束流比在25左右时,In_(0.4)Ga_(0.6)N_(0.01)As_(0.99)/Ga As量子阱PL发光强度最大,缺陷和位错最少;高生长速率可以获得较短的表面迁移长度和较好的晶体质量。

Growth and Photoluminescence Characteristics of InGaNAs/GaAs QW with High In Composition

InGaNAs/GaAs quantum-well ( QW) with high In composition ( >40%) which covered the optical fiber communication wavelength range of 1 . 3-1 . 55μm was grown on GaAs substrate by molecular beam epitaxy ( MBE) . The characteristics of N atom incorporation and growth properties for InGaNAs/GaAs QW were studied by photo luminescence ( PL) spectra at room temperature. The results show that the increasing of N composition can result in a large number of non-radiative recom-bination centers. The mole fraction of N decreases sharply from 2% to 0. 2% with the growth tem-perature increasing from 480℃ to 580℃. The change of In composition and As pressure cannot in-fluence the incorporation of N atoms and the adhesion coefficient of N is about 1 . The PL intensity at 1 . 3 μm for InGaNAs/GaAs QW is strongest at the growth temperature of 410 ℃ andⅤ/Ⅲratio of~25. Higher growth rate can obtain shorter surface migration length and improve the crystal quality.