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CMOS fully digital integrated pressure sensors
Authors:M -T Chau  D Dominguez  B Bonvalot  J Suski  
Affiliation:

a Anadrill/Schlumberger, 200 Gillingham Lane, Sugar Land, TX 77478, USA

b Schlumberger Industries, Gas Engineering Montrouge, 50 avenue Jean Jaurès, BP 620-05, F-92542, Montrouge Cedex, France

Abstract:Most commercially available silicon pressure transducers are based on a Wheatstone bridge configuration and given an analogue output signal. These devices are generally very sensitive to noise and require complicated circuits (by using passive components) for temperature and non-linearity compensation. This limits the transducer accuracy and increases the calibration cost. To overcome these problems, a new generation of pressure transducers with digital output, based on MOSFET ring oscillators, has been developed. A fully digital integrated pressure sensor and data-acquisition procedures will be presented.
Keywords:CMOS ring oscillators  Integrated sensors  Pressure sensors
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