| Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy |
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| 作者姓名： | Jiang Yulong Ru Guoping Qu Xinping Li Bingzong |
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| 作者单位： | 复旦大学微电子学系,上海 200433;复旦大学微电子学系,上海 200433;复旦大学微电子学系,上海 200433;复旦大学微电子学系,上海 200433 |
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| 基金项目： | 中国科学院资助项目
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上海市应用材料研究与发展基金
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国家自然科学基金
,
中国-比利时合作项目 |
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| 摘 要： | 采用不同硅化工艺制备了NiSi薄膜并用剖面透射电镜(XTEM)对样品的NiSi/Si界面进行了研究.在未掺杂和掺杂(包括As和B)的硅衬底上通过物理溅射淀积Ni薄膜,经快速热处理过程(RTP)完成硅化反应.X射线衍射和喇曼散射谱分析表明在各种样品中都形成了NiSi.还研究了硅衬底掺杂和退火过程对NiSi/Si界面的影响.研究表明:使用一步RTP形成NiSi的硅化工艺,在未掺杂和掺As的硅衬底上,NiSi/Si界面较粗糙;而使用两步RTP形成NiSi所对应的NiSi/Si界面要比一步RTP的平坦得多.高分辨率XTEM分析表明,在所有样品中都形成了沿衬底硅〈111〉方向的轴延-NiSi薄膜中的一些特定晶面与衬底硅中的(111)面对准生长.同时讨论了轴延中的晶面失配问题.
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| 关 键 词： | 接触界面 NiSi 镍硅化物 固相反应 快速热处理 contact interface NiSi nickel silicide solid-state reaction rapid thermal processing NiSi 界面 剖面 透射 电镜研究 Study Electron Microscopy Transmission spacing results show causes influence substrates doping annealing formation diffraction Raman scattering spectroscopy rapid thermal processing |
| 文章编号： | 0253-4177(2006)02-0223-06 |
| 收稿时间： | 07 22 2005 12:00AM |
| 修稿时间： | 2005年7月22日 |
Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy |
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| Jiang Yulong,Ru Guoping,Qu Xinping,Li Bingzong.Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy[J].Chinese Journal of Semiconductors,2006,27(2):223-228. |
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| Authors: | Jiang Yulong Ru Guoping Qu Xinping and Li Bingzong |
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| Affiliation: | Department of Microelectronics,Fudan University,Shanghai 200433,China;Department of Microelectronics,Fudan University,Shanghai 200433,China;Department of Microelectronics,Fudan University,Shanghai 200433,China;Department of Microelectronics,Fudan University,Shanghai 200433,China |
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| Abstract: | Different silicidation processes are employed to form NiSi,and the NiSi/Si interface corresponding to each process is studied by cross-section transmission electron microscopy (XTEM).With the sputter deposition of a nickel thin film,nickel silicidation is realized on undoped and doped (As and B) Si(001) substrates by rapid thermal processing (RTP).The formation of NiSi is demonstrated by X-ray diffraction and Raman scattering spectroscopy.The influence of the substrate doping and annealing process (one-step RTP and two-step RTP) on the NiSi/Si interface is investigated.The results show that for one-step RTP the silicidation on As-doped and undoped Si substrates causes a rougher NiSi/Si interface,while the two-step RTP results in a much smoother NiSi/Si interface.High resolution XTEM study shows that axiotaxy along the Si<111> direction forms in all samples,in which specific NiSi planes align with Si(111) planes in the substrate.Axiotaxy with spacing mismatch is also discussed. |
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| Keywords: | contact interface NiSi nickel silicide solid-state reaction rapid thermal processing |
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