High reliability sputtered Schottky diodes on GaAs |
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| Authors: | Q. P. Pham W. M. Kelly P. Maaskant J. O'Brien |
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| Affiliation: | (1) National Microelectronics Research Centre, University College, Lee Maltings, Prospect Row, Cork, Ireland |
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| Abstract: | We describe developments to improve reliability and power handling for high frequency applications in whisker-contacted Schottky barrier diode mixers, detectors and multipliers fabricated using sputtered refractory metals and silicides. The lift-off process has been used to fabricate diodes on GaAs with ideality factors of 1.18 and 1.06 for W/GaAs and TiSix/GaAs contacts respectively. |
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