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Magnetic behavior of Ga doped yttrium iron garnet ferrite thin films deposited by sol-gel technique
Affiliation:1. Moscow Institute of Physics and Technology (State University), 141700 Dolgoprudny, Moscow, Russia;2. National Research University of Electronic Technology, 124498 Zelenograd, Moscow, Russia;3. Institute of Molecule and Crystal Physics – Subdivision of the Ufa Federal Research Centre of the Russian Academy of Sciences, Ufa 450075, Russia;4. Bashkir State University, Ufa 450000, Russia
Abstract:Yttrium Iron Garnet (YIG) ferrites thin films having compositional formula Y3GaxFe5-xO12, where (x = 0, 1, 2, 3, 4) are synthesized by sol gel dip coating technique. XRD, SEM and VSM characterizations are employed to explore structural, morphological and magnetic properties, respectively. XRD showed that Ga is completely doped in YIG and not formed any cluster or other phase with YIG. SEM confirmed the formation of agglomeration of YIG particles. Magnetic parameters like coercivity, remnant squareness, saturation magnetization, magnetic moment, anisotropy constant, initial permeability Y–K angles and microwave frequency were calculated of these films. The coercivity and moderate magnetization suggested that fabricated ferrite films are highly applicable in electromagnetic microwave absorption and frequency agile antenna for wireless communication.
Keywords:Ga  YIG  XRD  SEM  VSM
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