Enhanced thermoelectric properties of atomic-layer-deposited Hf:Zn16O/18O superlattice films by interface-engineering |
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| Affiliation: | 1. Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, India;2. Department of Chemical Engineering, Jadavpur University, Kolkata 700032, India;3. Department of Chemical Engineering, BITS Pilani, K. K. Birla Goa Campus, Sancoale, Goa 403726, India;4. Department of Chemistry, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, India;1. Department of Physics, Government College University Faisalabad, Pakistan;2. Department of Chemistry, The Islamia University of Bahawalpur, Pakistan;3. Department of Physics, Women University of Azad Jammu and Kashmir, Bagh, Azad Kashmir, Pakistan;4. Department of Physics, Division of Science and Technology, University of Education Lahore, Pakistan;1. Department of Physics, Khon Kaen University, Khon Kaen 40002, Thailand;2. Integrated Nanotechnology Research Center (INRC), Department of Physics, Khon Kaen University, Khon Kaen 40002, Thailand;3. Nanotec-KKU Center of Excellence on Advanced Nanomaterials for Energy Production and Storage, Khon Kaen 40002, Thailand;4. Thailand Center of Excellence in Physics, Commission on Higher Education, Bangkok 10400, Thailand;5. School of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000, Thailand;1. Physics Department, Dillard University, New Orleans, LA, 70122, USA;2. SSS Optical Technologies, 515 Sparkman Drive, Huntsville, AL, 35816, USA;3. Shibaura Institute of Technology, SIT Research Laboratories, 3-7-5, Toyosu, Koto-ku, 135-8548, Tokyo, Japan;4. Muroran Institute of Technology, Muroran, Hokkaido, 050-8585, Japan;5. The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan;1. Center for Innovation Materials and Architectures (INOMAR), Ho Chi Minh City, Viet Nam;2. Vietnam National University, Ho Chi Minh City, Viet Nam;3. Program of Physics, Faculty of Science and Technology, Sakon Nakhon Rajabhat University, 680 Nittayo Road, Mueang District, Sakon Nakhon, 47000, Thailand;4. Thin Films Research Laboratory, Center of Excellence on Alternative Energy, Research and Development Institution, Sakon Nakhon Rajabhat University, 680 Nittayo Road, Mueang District, Sakon Nakhon, 47000, Thailand;5. National Metal and Materials Technology Center, National Science and Technology Development Agency, Pathumthani, 12120, Thailand;6. National Electronics and Computer Technology Center, 114 Thailand Science Park, Paholyothin Road, Klong 1, Klong Luang, Pathumthani, 12120, Thailand;7. Centre for Advanced Materials, Organisation for Science Innovations and Research, RS Science Park, Bah, 283104, India;8. Department of Mathematics and Physics, University of Information Technology, Ho Chi Minh City, Viet Nam;9. Laboratory of Advanced Materials, University of Science, Ho Chi Minh City, Viet Nam |
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| Abstract: | This study examines three novel approaches for enhancing the thermoelectric (TE) properties of atomic-layer-deposited (ALD) ZnO thin films: 1) Hf-doping, which preserved the crystallinity of ZnO and provided effective phonon scattering owing to Hf's similar atomic radius to and large mass difference with Zn, leading to high power factor (PF) and low thermal conductivity (κ); 2) controlling the distribution of Hf into an alternating scattered phase/clustered phase superlattice, which balanced the high PF of the scattered phases with the low κ of the clustered phases, while providing significant energy-filtering effect to raise the Seebeck coefficient; 3) introducing 18O/16O periodicity into the Hf:ZnO films—by alternately using H216O and H218O as oxidants in the ALD processes, which further suppressed κ without compromising PF. The combination of the three approaches resulted in a maximum improvement in ZT of ~1600% over that of the undoped ZnO. |
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| Keywords: | Atomic layer deposition Transparent conductive oxides Thermoelectric Superlattice Energy filtering |
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