| 基于高温扩散的AlGaAs靶制备 |
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| 引用本文： | 阎大伟,吴卫东,王雪敏,王瑜英,沈昌乐,彭丽萍.基于高温扩散的AlGaAs靶制备[J].太赫兹科学与电子信息学报,2011,9(3):358-360. |
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| 作者姓名： | 阎大伟 吴卫东 王雪敏 王瑜英 沈昌乐 彭丽萍 |
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| 作者单位： | 中国工程物理研究院,激光聚变研究中心,四川绵阳,621900 |
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| 摘 要： | 基于高温扩散理论,研究了不同温度下Al在GaAs中的扩散情况。利用扫描电子显微镜(SEM)对Al在GaAs中的浓度分布和Al与GaAs的界面进行了表征。结果表明:当扩散温度较低时(650℃),Al在GaAs中扩散较快,可获得较佳的扩散结果。当温度升高后(800℃),GaAs中的As挥发增强,其在Al和GaAs界面处富集,阻碍了Al向GaAs中的扩散。最后根据实验结果,利用Fick定律计算了在650℃下AlGaAs靶的制备时间。
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| 关 键 词： | AlGaAs 高温扩散 扫描电子显微镜 |
| 收稿时间： | 2011/3/13 0:00:00 |
| 修稿时间： | 2011/4/29 0:00:00 |
Fabrication of AlGaAs alloy using diffusion method |
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| YAN Da-wei,WU Wei-dong,WANG Xue-min,WANG Yu-ying,SHEN Chang-le and PENG Li-ping.Fabrication of AlGaAs alloy using diffusion method[J].Journal of Terahertz Science and Electronic Information Technology,2011,9(3):358-360. |
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| Authors: | YAN Da-wei WU Wei-dong WANG Xue-min WANG Yu-ying SHEN Chang-le and PENG Li-ping |
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| Affiliation: | YAN Da-wei,WU Wei-dong,WANG Xue-min,WANG Yu-ying,SHEN Chang-le,PENG Li-ping(Research Center of Laser Fusion,China Academy of Engineering Physics,Mianyang Sichuan 621900,China) |
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| Abstract: | AlGaAs alloy was prepared using diffusion method under 650 ℃ and 800 ℃.The effect of temperature on the diffusion rate of AlGaAs alloy was investigated by Scanning Electron Microscopy（SEM）.The results showed that diffusion rate decreased as the temperature increased.It was suggested that the high temperature would promote the enrichment of As atoms at the interface of Al and GaAs,which would withdraw the further diffusion of Al.The preparation time of AlGaAs under 650 ℃ was calculated in Fick law according to the experiments. |
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| Keywords: | AlGaAs diffusion method Scanning Electron Microscopy(SEM) |
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