Ba and Mg co-doping to suppress high-temperature dielectric loss in lead-free Na0.5Bi0.5TiO3-based systems |
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| Affiliation: | 1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, PR China;2. National Key Laboratory of Science and Technology on Precision Heat Processing of Metals, Harbin Institute of Technology, Harbin 150001, PR China;3. School of Light Industry, Harbin University of Commerce, Harbin 150028, PR China;4. State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, PR China;1. School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang, 621010, China;2. National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, 621900, China;3. Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology and Research Center of Laser Fusion, CAEP, Mianyang, 621010, China;1. Shaanxi Province Key Laboratory for Electrical Materials and Infiltration Technology, School of Materials Science and Engineering, Xi’an University of Technology, Xi’an, 710048, PR China;2. Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt, Germany |
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| Abstract: | In this study, Ba, Mg co-doped BNT-based ferroelectric ceramic (Ba0.2Na0.3Bi0.5)Ti0.9Mg0.1O3 is fabricated by conventional solid-state reaction to obtain high-temperature dielectric performance. The temperature dependent dielectric constant and dielectric loss are investigated to understand the high-temperature dielectric behavior of the ceramic. The results show that Ba, Mg co-doped BNT ceramic has a very low dielectric loss (about 0.006–0.023) in a wide temperature range of 200–400 °C with dielectric constant about 3200–3800. The complex impedance plots, temperature dependent conductivity and first principle results reveal that the low dielectric loss at high-temperature is mainly due to the Ba doping increases the migration barrier energy of oxygen ions in BNT. The oxygen ion conduction of BNT-based ceramics is restrained, so that the dielectric loss reduces significantly. The study provides a new BNT-based material with low dielectric loss and temperature- stable dielectric constant in a wide temperature range which has great value of high-temperature applications. |
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| Keywords: | High-temperature dielectric loss Co-doping Oxygen ion conduction |
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