Nd: Bi4Ge3O12 crystal growth by czochralski method |
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| Authors: | Kook Bae Chin Myung Whang |
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| Affiliation: | (1) Division of Geology, Korea Institute of Geology, Mining and Materials, 30 Gajeong-dong, Yusong-ku, 305-350 Taejeon, Korea;(2) Department of Ceramic Engineering, Inha University, 253 Yonghyun-dong, Nam-ku, 402-751 Inchon, Korea |
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| Abstract: | Nd-doped Bi4Ge3O12 (Nd:BGO) crystals were successfully grown in the auto-diameter control system equipped with a frequency weighing sensor with the Czochralski method. The Nd3+ ion doping level was varied from 0.25 to 2.5 at.%. The crystals were transparent and of light purple color, with a typical size of about 20 mm in diameter and 50 mm in length. The effective distribution coefficient (keff) of Nd3+ ion was about 0.957 irrespective of concentration, and the Nd3+ ions were distributed homogeneously throughout the crystal. The doping concentration (pi) of active ion in Nd:BGO crystal was 2.54x1020 ions/cm3, which is higher than that in the Nd:YAG crystal. Therefore, the Nd:BGO crystal was judged to be more suitable for the laser diode pumping microchip laser material where size reduction was desirable. |
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| Keywords: | Nd:BGO Czochralski crystal growth LD pumped microchip laser material. |
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