| 不同缓冲层对Al掺杂ZnO薄膜性能的影响 |
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| 引用本文： | 肖立娟,李长山,郝嘉伟,赵鹤平. 不同缓冲层对Al掺杂ZnO薄膜性能的影响[J]. 功能材料与器件学报, 2012, 18(2): 138-141 |
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| 作者姓名： | 肖立娟 李长山 郝嘉伟 赵鹤平 |
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| 作者单位： | 吉首大学物理与机电工程学院,湖南吉首,416000 |
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| 基金项目： | 湖南省研究生科研创新项目，湖南省自然科学基金，湖南省高等学校科研基金 |
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| 摘 要： | 本文采用射频反应磁控溅射法在玻璃基底上分别以Al2O3和AZO为缓冲层制备ZnO:Al(AZO)薄膜,利用X射线衍射仪(XRD)、扫描电镜(SEM)、紫外-可见分光光度计等方法对薄膜的结构和光电性能进行表征。XRD和SEM的分析结果表明,在Al2O3和AZO缓冲层上生长的AZO薄膜均具有较好的C轴择优取向,薄膜表面光滑平整,薄膜的结晶质量得到改善;透射光谱表明所有样品在可见光范围内的透过率均超过80%;薄膜的导电性能得到提高。
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| 关 键 词： | AZO薄膜 缓冲层 晶体结构 光电性能 |
Effect of Different Buffer Layers on the Properties of Al-doped ZnO Films |
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| XIAO Li-Juan , LI Chang-Shan , HAO Jia-Wei , ZHAO He-Ping. Effect of Different Buffer Layers on the Properties of Al-doped ZnO Films[J]. Journal of Functional Materials and Devices, 2012, 18(2): 138-141 |
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| Authors: | XIAO Li-Juan LI Chang-Shan HAO Jia-Wei ZHAO He-Ping |
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| Affiliation: | (College of Physics and Electronic Engineering,Jishou University, Jishou 416000,Hunan Province,China) |
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| Abstract: | AZO films withAl2O3 and AZO buffer layers were deposited by RF magnetron sputtering.The structure and Optoelectronic properties of AZO films were analyzed by X-ray diffraction(XRD),scanning electron microscopy(SEM),UV-VIS spectrophotometer.The results show that Al2O3 and AZO buffer layers with better c-axis preferred orientation,smooth surface,and the crystal quality has been improved;The transmittance in ultraviolet-visible region is higher than 80%;The conductivity of the film is also improved. |
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| Keywords: | AZO thin film buffer layer crystal structure optoelectronic properties |
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