| 退火过程中自组织生长Ge量子点的变化 |
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| 引用本文： | 胡冬枝,杨建树,蔡群,张翔九,胡际璜,蒋最敏. 退火过程中自组织生长Ge量子点的变化[J]. 半导体学报, 2002, 23(6): 561-564. DOI: 10.3969/j.issn.1674-4926.2002.06.001 |
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| 作者姓名： | 胡冬枝 杨建树 蔡群 张翔九 胡际璜 蒋最敏 |
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| 作者单位： | 复旦大学应用表面物理国家重点实验室,上海,200433 |
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| 摘 要： | 在超高真空系统中,用扫描隧道显微镜(STM)和原子力显微镜(AFM)研究了自组织生长的Ge量子点经不同温度退火后的变化.实验发现,当退火温度为630℃时,出现了许多新的量子点.与原来的在分子束外延过程中形成的无失配位错的量子点相比,新形成的量子点被认为是存在位错的岛.
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| 关 键 词： | 量子点 硅基材料 形貌评价 AFM |
Evolution of Self-Organized Ge Quantum Dots During Ultra High Vacuum Annealing |
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| Hu Dongzhi,Yang Jianshu,Cai Qun,Zhang Xiangjiu,Hu Jihuang and Jiang Zuimin. Evolution of Self-Organized Ge Quantum Dots During Ultra High Vacuum Annealing[J]. Chinese Journal of Semiconductors, 2002, 23(6): 561-564. DOI: 10.3969/j.issn.1674-4926.2002.06.001 |
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| Authors: | Hu Dongzhi Yang Jianshu Cai Qun Zhang Xiangjiu Hu Jihuang Jiang Zuimin |
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| Abstract: | The evolution of self-organized Ge quantum dots structure is investigated by scanning tunneling microscopy and atomic force microscopy during annealing treatment up to 700℃ in an ultra high vacuum(UHV) system.When the sample temperature rises to 630℃,a great amount of new dots emerge on the wetting layer,which are believed to be incoherent islands compared with the dislocation-free coherent islands formed during molecular beam epitaxy growth. |
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| Keywords: | quantum dots Si based materials evolution of morphology atomic force microscopy |
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