| 碲镉汞雪崩焦平面器件 |
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| 引用本文： | 李浩,林春,周松敏,郭慧君,王溪,陈洪雷,魏彦锋,陈路,丁瑞军,何力. 碲镉汞雪崩焦平面器件[J]. 红外与毫米波学报, 2019, 38(5): 587-590 |
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| 作者姓名： | 李浩 林春 周松敏 郭慧君 王溪 陈洪雷 魏彦锋 陈路 丁瑞军 何力 |
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| 作者单位： | 中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083;中国科学院大学,北京100049;中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083;上海科技大学,上海201210;中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海,200083 |
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| 基金项目： | 国家自然科学基金 61705247国家自然科学基金(61705247) |
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| 摘 要： | 碲镉汞雪崩光电二极管以其高增益、高灵敏度和高速探测的优点成为第3代红外光电探测器的重要发展方向之一.制备了截止波长3.56μm的雪崩光电二极管焦平面器件,面阵规模为16×16.焦平面器件在0～6V偏压下有效像元率大于90%,非均匀性小于20%.6 V偏压下NEPh约为60,过剩噪声因子为1.2.
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| 关 键 词： | 碲镉汞 雪崩光电二极管 焦平面 噪声等效光子数 过剩噪声因子 |
| 收稿时间： | 2019-01-09 |
| 修稿时间： | 2019-07-08 |
HgCdTe avalanche photodiode FPA |
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| LI Hao,LIN Chun,ZHOU Song-Min,GUO Hui-Jun,WANG Xi,CHEN Hong-Lei,WEI Yan-Feng,CHEN Lu,DING Rui-Jun and HE Li. HgCdTe avalanche photodiode FPA[J]. Journal of Infrared and Millimeter Waves, 2019, 38(5): 587-590 |
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| Authors: | LI Hao LIN Chun ZHOU Song-Min GUO Hui-Jun WANG Xi CHEN Hong-Lei WEI Yan-Feng CHEN Lu DING Rui-Jun HE Li |
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| Affiliation: | Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China;University of Chinese Academy of Science, Beijing 100049, China,Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China;ShanghaiTech University, Shanghai 201210, China,Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China,Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China,Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China,Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China,Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China,Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China,Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China,Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China |
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| Abstract: | |
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| Keywords: | HgCdTe APD FPA NEPh excess noise factor. |
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