InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping |
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Authors: | T C Wen S J Chang Y K Su L W Wu C H Kuo W C Lai J K Sheu T Y Tsai |
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Affiliation: | (1) Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, 70101 Tainan, Taiwan;(2) South Epitaxy Corporation, 744 Hsin-Shi, Taiwan;(3) Optical Science Center, National Central University, 320 Chung-Li, Taiwan |
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Abstract: | High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping
method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from
well-sensitive emission and one originating from an InGaN quasi-wetting layer on the GaN-barrier surface, were observed at
room temperature (RT). The observation of high-order double-crystal x-ray diffraction (DCXRD) satellite peaks indicates that
the interfaces between InGaN-well layers and GaN-barrier layers were not degraded as we increased the growth temperature of
the GaN-barrier layers. With a 20-mA and 160-mA current injection, it was found that the output power could reach 2.2 mW and
8.9 mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature
ramping was also reasonably good. |
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Keywords: | InGaN/GaN multiple-quantum well (MQW) green light-emitting diode (LED) PL reliability |
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