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sol-gel法制备ATO薄膜的结构与光学性能研究
引用本文:曾凡菊,李玲,周超.sol-gel法制备ATO薄膜的结构与光学性能研究[J].电子元件与材料,2009,28(12).
作者姓名:曾凡菊  李玲  周超
作者单位:暨南大学,物理系,广东,广州,510632
摘    要:采用sol-gel法在玻璃衬底上制备ATO(SnO2∶Sb)薄膜,并用XRD、SEM、紫外-可见光谱和光致发光对薄膜进行了表征,研究了ATO薄膜的结构和光学性能。结果表明:ATO薄膜微晶晶相与SnO2一致,仍然是四方金红石结构;ATO薄膜在可见光区的透过率超过80%,当r(Sb∶Sn)为0.15时,ATO薄膜的透过率最高达87%;ATO薄膜在344~380nm处有一个很强的紫外-紫光发射带,随着Sb掺杂量的增加,发射峰逐渐变强,在r(Sb∶Sn)为0.25时,发射峰相对强度达302.4。

关 键 词:sol-gel法  ATO薄膜  紫外-可见光谱  光致发光(PL)

Study on structure and optical properties of ATO thin films prepared by sol-gel method
ZENG Fanju,LI Ling,ZHOU Chao.Study on structure and optical properties of ATO thin films prepared by sol-gel method[J].Electronic Components & Materials,2009,28(12).
Authors:ZENG Fanju  LI Ling  ZHOU Chao
Abstract:Sb-doped SnO_2(ATO) thin films were prepared on glass substrates by sol-gel method.The thin films were characterized by XRD,SEM,UV-Vis spectroscopy and photoluminescence(PL).The structure and optical properties of ATO thin films were studied.The results show that the microcrystalline of ATO thin films is the same as SnO_2 of quartet rutile structure.The mean transmittances of the ATO thin films are higher than 80% in visible region,ATO thin films doped with Sb(r(Sb:Sn)=0.15)have high transmittance of 87%.ATO thin films have strong luminescence band of UV-PL in 344~380 nm.The luminescence peak becomes stronger with the increase of Sb doping amount.When r(Sb:Sn) is 0.25,the relative intensity of luminescence peak is up to 302.4.
Keywords:sol-gel method  ATO thin films  UV-Vis spectroscopy  photoluminescence(PL)
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