| 用双晶衍射摆动曲线半峰宽研究硅片机械强度 |
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| 引用本文： | 赵炳辉,陈立登.用双晶衍射摆动曲线半峰宽研究硅片机械强度[J].浙江大学学报(自然科学版 ),1991,25(5):538-542. |
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| 作者姓名： | 赵炳辉 陈立登 |
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| 作者单位： | 浙江大学材料系
(赵炳辉)，浙江大学半导体材料研究所(陈立登) |
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| 摘 要： | 实验研究了X射线双晶衍射摆动曲线半峰宽与硅片表面损伤层剥层深度及抗弯强度三者之间的关系。讨论了不同损伤类型的分布及对硅片机械强度的影响。从双晶衍射半峰宽值可以评估硅片的抗弯强度。
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| 关 键 词： | 硅 双晶衍射 抗弯强度 半峰宽值 |
Finding out the half width of double crystal rocking curve for estimating strength of silicon wafer |
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| Zhao Binghui Chen Lideng.Finding out the half width of double crystal rocking curve for estimating strength of silicon wafer[J].Journal of Zhejiang University(Engineering Science),1991,25(5):538-542. |
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| Authors: | Zhao Binghui Chen Lideng |
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| Affiliation: | Dept. of Material Science |
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| Abstract: | The relationship between the half width of X -y ray double crystal rocking curve, the depth of damage leyer of silicon surface and the bending stress are investigated through experiments. The different distributions of kings of the damage and influence on the mechnical strength are discussed. By the halfwidth of rocking curve we can estimate the bending stress of silicon wafer. |
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| Keywords: | silicon bending stress double crystal diffraction |
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