Effect of charge sharing on the single event transient response of CMOS logic gates |
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Authors: | Duan Xueyan Wang Liyun Lai Jinmei |
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Affiliation: | State Key Laboratory ofASIC & System, School of Microelectronics, Fudan University, Shanghai 201203, China |
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Abstract: | This paper presents three new types of pulse quenching mechanism(NMOS-to-PMOS,PMOS-to-NMOS and NMOS-to-NMOS) and verifies them using 3-D TCAD mixed mode simulations at the 90 nm node. The three major contributions of this paper are:(1) with the exception of PMOS-to-PMOS,pulse quenching is also prominent for PMOS-to-NMOS and NMOS-to-NMOS in a 90 nm process.(2) Pulse quenching in general correlates weakly with ion LET,but strongly with incident angle and layout style(i.e.spacing between transistors and n-well... |
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Keywords: | single event transient charge sharing pulse quenching 3-D TCAD simulation radiation hardening |
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