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Selenium doping of GalnP by atomic layer epitaxy |
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| Authors: | D. Jung M. Leonard N. E. El-Masry S. M. Bedair |
| Affiliation: | (1) Department of Physics, North Carolina State University, 27695-8202 Raleigh, NC;(2) Present address: Laser Diode Laboratory, Samsung Advanced Institute of Technology, P.O. Box 111, 440-600 Suwon, South Korea;(3) Department of Electrical and Computer Engineering, North Carolina State University, 27695-7911 Raleigh, NC |
| Abstract: | Selenium doping of GalnP was performed using atomic layer epitaxy. The dependence of the n-type carrier concentration of Se-doped GalnP on growth temperature was quite different from that of Se-doped GaAs. Reducing growth temperature was found to be a crucial factor in achieving high n-type doping levels in as-grown Se-doped GalnP. |
| Keywords: | Atomic layer epitaxy (ALE) GaAs GalnP selenium (Se) |
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