|
|||||
|
|
On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon |
|
| Authors: | Seredin P V Radam Ali Obaid Goloshchapov D L Len’shin A S Buylov N S Barkov K A Nesterov D N Mizerov A M Timoshnev S N Nikitina E V Arsentyev I N Sharafidinov Sh Kukushkin S A Kasatkin I A |
| Affiliation: | 1.Voronezh State University, 394018, Voronezh, Russia ;2.Ural Federal University named after the first President of Russia B.N. Yeltsin, 620002, Yekaterinburg, Russia ;3.Voronezh State University of Engineering Technologies, 394036, Voronezh, Russia ;4.Federal State Budgetary Institution of Higher Education and Science “St. Petersburg National Research Academic University,” Russian Academy of Sciences, 194021, St. Petersburg, Russia ;5.Ioffe Institute, 194021, St. Petersburg, Russia ;6.Institute for Problems of Mechanical Engineering, Russian Academy of Sciences, 199178, St. Petersburg, Russia ;7.St. Petersburg State University, 199034, St. Petersburg, Russia ; |
| Abstract: | Semiconductors - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid... |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |
