Spin relaxation in InGaN quantum disks in GaN nanowires |
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Authors: | Banerjee Animesh Do?an Fatih Heo Junseok Manchon Aurelien Guo Wei Bhattacharya Pallab |
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Affiliation: | Center for Nanoscale Photonics and Spintronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, United States. |
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Abstract: | The spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order of ~100 ps at 300 K and are weakly dependent on temperature. Theoretical considerations show that the Elliott-Yafet scattering mechanism is essentially absent in these materials and the results are interpreted in terms of the D'yakonov-Perel' relaxation mechanism in the presence of Rashba spin-orbit coupling of the wurtzite structure. The calculated spin relaxation times are in good agreement with the measured values. |
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