|
|||||
|
|
| 铅过量PLZT铁电薄膜的制备及其电学性质研究 | |
| 引用本文： | 侯识华,宋世庚,马远新,郑毓峰. 铅过量PLZT铁电薄膜的制备及其电学性质研究[J]. 材料科学与工程学报, 2001, 19(3): 43-47 |
| 作者姓名： | 侯识华 宋世庚 马远新 郑毓峰 |
| 作者单位： | 1. 中国科学院新疆物理研究所 2. 新疆医科大学 3. 新疆大学物理系 |
| 基金项目： | 国家自然科学基金，19702016， |
| 摘 要： | 采用Sol Gel法 ,在Pt TiO2 Si基片上制备了具有不同铅过量 (0— 2 0mol% )的PLZT铁电薄膜。分析了薄膜的晶相结构 ,研究了铅过量对PLZT铁电薄膜的介电性能和铁电性能的影响。结果表明 ,各薄膜均具有钙钛矿型结构 ,且各薄膜均呈 (110 )择优取向。PLZT铁电薄膜的介电性能和铁电性能随铅过量的变化而改变。铅过量为 10mol%的薄膜具有最佳的的介电性能和铁电性能。 |
| 关 键 词： | Sol-Gel法 PLZT 铁电薄膜 铅过量 电学性质 |
| 文章编号： | 1004-793(2001)03-0043-05 |
| 修稿时间： | 2001-01-06 |
Preparation of PLZT Ferroelectric Thin Films with Different Excess Pb and Their Electrical Properties |
|
| HOU Shi-hua ,SONG Shi-geng ,MA Yuan-xin ,ZHENG Yu-feng. Preparation of PLZT Ferroelectric Thin Films with Different Excess Pb and Their Electrical Properties[J]. Journal of Materials Science and Engineering, 2001, 19(3): 43-47 | |
| Authors: | HOU Shi-hua SONG Shi-geng MA Yuan-xin ZHENG Yu-feng |
| Affiliation: | HOU Shi-hua 1,SONG Shi-geng 1,MA Yuan-xin 2,ZHENG Yu-feng 3 |
| Abstract: | PLZT ferroelectric thin films with 0mol% to 20mol% excess Pb have been prepared by a sol-gel method on Pt/TiO 2/Si substrates.The crystalline structures of the PLZT films were analyzed by the X-ray diffractometry(XRD).The effect of Pb content on the dielectric and ferroelectric properties of the PLZT thin films have been studied. All PLZT films had a perovskite structure with the <110> preferred orientation.The dielectric and ferroelectric properties of the PLZT thin films varies with Pb content.The film with 10mol% excess Pb has the optimum dielectric and ferroelectric properties . |
| Keywords: | sol-gel method PLZT ferroelectric thin films quantity of excess Pb electrical properties |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |
