The conductive mechanisms of a titanium oxide memristor with dopant drift and a tunnel barrier |
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Authors: | Tian Xiao-Bo Xu Hui and Li Qing-Jiang |
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Affiliation: | Embedded System and Solid-State Engineering Technology Center, School of Electronic Science and Engineering, National University of Defense and Technology, Changsha 410073, China |
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Abstract: | Nano-scale titanium oxide memristors exhibit complex conductive characteristics, which have already been proved by existing research. One possible reason for this is that more than one mechanism exists, and together they codetermine the conductive behaviors of the memristor. In this paper, we first analyze the theoretical base and conductive process of a memristor, and then propose a compatible circuit model to discuss and simulate the coexistence of the dopant drift and tunnel barrier-based mechanisms. Simulation results are given and compared with the published experimental data to prove the possibility of the coexistence. This work provides a practical model and some suggestions for studying the conductive mechanisms of memristors. |
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Keywords: | memristor conductive mechanism dopant drift tunnel barrier |
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